Wheatstone-Bridge readout interface for ISFET/REFET applications

نویسندگان

  • Arkadiy Morgenshtein
  • Liby Sudakov-Boreysha
  • Uri Dinnar
  • Claudio G. Jakobson
  • Yael Nemirovsky
چکیده

The paper presents a novel readout configuration for ISFET sensors based on Wheatstone-Bridge connection. This design technique allows on-chip integration, temperature compensation and measurements from ISFET/REFET pairs. The circuit is capable of operating in differential mode, and can also perform common mode and combined measurements, while improving the immunity to noise and interferences. The Wheatstone-Bridge interface benefits from enhanced operational flexibility, due to the ability of relative sensitivity control of the output signal. Direct and indirect feedback configurations are presented with operational analysis, simulations and application options. Simulation results showing 9 V accuracy are presented. A 4 mm × 4 mm test chip in 1.6 m CMOS technology was used for laboratory experiments using MOSFETs for emulation of ISFET/REFET sensors. © 2003 Elsevier B.V. All rights reserved.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Ultra-Low-Power Differential ISFET/REFET Readout Circuit

© 2009 Apinunt Thanachayanont et al. 243 ABSTRACT⎯A novel ultra-low-power readout circuit for a pH-sensitive ion-sensitive field-effect transistor (ISFET) is proposed. It uses an ISFET/reference FET (REFET) differential pair operating in weak-inversion and a simple current-mode metal-oxide semiconductor FET (MOSFET) translinear circuit. Simulation results verify that the circuit operates with e...

متن کامل

HOW ELECTRICAL AND CHEMICAL MAY COINCIDE REQUIREMENTS FOR REFETs

After discussing the features of a differential ISFET/REFET measuring concept, the published attempts to construct a proper REFET are summarized. It is concluded that the present REFETs are based upon the addition of a blocking polymeric layer to the gate surface of an ISFET, but that this approach fails with respect to the required insensitivity to ionic strength variations as well as with res...

متن کامل

Optimization of a PVC Membrane for Reference Field Effect Transistors

For the miniaturization of ISFET sensing systems, the concept of a REFET with low ion sensitivity is proposed to replace the conventional reference electrodes through the arrangement of a quasi reference electrode and a differential readout circuit. In this study, an ion-unblocking membrane was used as the top layer of a REFET. To optimize the REFET performance, the influences of the silylating...

متن کامل

New ISFET interface circuit design with temperature compensation

An integrated and new interface circuit with temperature compensation has been developed to enhance the ISFET readout circuit stability. The bridge-type floating source circuit suitable for sensor array processing has been proposed to maintain reliable constant drain–source voltage and constant drain current (CVCC) conditions for measuring the threshold voltage variation of ISFET due to the cor...

متن کامل

Development of an Ion Sensitive Field Effect Transistor Based Urea Biosensor with Solid State Reference Systems

Ion sensitive field-effect transistor (ISFET) based urease biosensors with solid state reference systems for single-ended and two-ended differential readout electronics were investigated. The sensing membranes of the biosensors were fabricated with urease immobilized in a conducting polymer-based matrix. The responses of 12.9∼198.1 mV for the urea concentrations of 8∼240 mg/dL reveal that the a...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2004